A leak reveals exciting details about the Galaxy S23

Leaks continue about the upcoming Samsung flagship phone, the Galaxy S23, which is a family that will include 3 phones between the basic and the Plus model in addition to the best option, the Ultra, which is scheduled to be launched next February.

Many rumors dealt with the specifications of the Galaxy S23 with various options, and with the launch date approaching, which will most likely be on February 1, information coming from informed and reliable sources continues.

According to the latest leaks, Samsung decided to improve the internal spaces in all the upcoming Galaxy S23 options, so that the minimum storage capacity is 256 GB, unlike previous years, which started from 128 GB.

And according to GSMArena, the 128 GB storage space option for the flagship Galaxy S series has ended, and the next generation will be with options for storage space starting from 256 GB.

The report added that moving to a storage capacity of 256 GB means that there will be no version with 8 GB of random memory in the Samsung Galaxy S23 Ultra, and there will be only 12 GB of RAM.

The latest leaks reveal that there is only one storage option for the S23 and S23 Plus, while there are 3 storage options for the Ultra, leaving it open about the possibilities, will there be only one option for storage space and random memory, or is it only the minimum and there will be higher options .

In any case, the report states that the Galaxy S23 and S23 Plus will have 8 GB of random memory and 256 storage space, while the higher model S23 Ultra will have 12 GB of RAM and 256 or 215 or 1 TB of storage.

It is worth noting that the previous generation started with the basic model and the Plus model from 8/128 GB, in addition to 3 options from Ultra, which are; 12/256 GB or 12/512 GB or 12 GB / 1 TB.

It should also be noted that this information comes days after it was revealed that Samsung decided to rely on storage chips in the Galaxy S23 of the UFS 4.0 generation instead of UFS 3.1 in the 2022 generation.

The new generation of storage chips provides 2 times faster reading speed and 1.6 times faster writing speed, and there is also a 46% improvement in energy efficiency, which increases battery life.

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