Samsung has produced samples of HBM3e memory for qualification in NVIDIA’s test labs, which is expected to use the technology in its next generation of artificial intelligence accelerators. The South Korean giant now waiting for approval from partner hardware manufacturer to start mass production of the modules.
One of the memory models announced by Samsung is the HBM3E 12H, which features data transfer speeds of up to 9.8 Gbps per pin and a capacity of 32 GB. Despite its advances, the company has shown a slow technological evolution compared to rivals in the segment, such as SK hynix.
Industry rumors claimed Samsung had failed NVIDIA’s tests, but the AI giant’s own CEO, Jensen Huang, denied the rumors. “Our work with Samsung is going well, and we need to be patient,” he said.
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