2023-12-22 21:10:00
A research team in Japan has explored a new use for diamonds, far beyond its aesthetic appeal. Their work focuses on improving gallium nitride (GaN) transistors, high-power, high-frequency semiconductor devices used in mobile and satellite communications systems.
The challenge of semiconductor miniaturization
The increasing miniaturization of semiconductor devices poses problems such as increased power density and heat generation, which can affect the performance, reliability and lifespan of these devices. Therefore, effective thermal management is crucial.
The diamondwhich has the highest thermal conductivity of all natural materials, is an ideal substrate material, but has not yet been put into practice due to the difficulties of bonding diamond to GaN elements.
A new technology in the making
The research team led by associate professor Jianbo Liang and the teacher Naoteru Shigekawa de la Graduate School of Engineering de l’Osaka Metropolitan University successfully fabricated GaN high electron mobility transistors using diamond as a substrate.
This new technology has more than double the heat dissipation performance of transistors of the same shape made on a silicon carbide (SiC) substrate. To maximize the high thermal conductivity of diamond, the researchers integrated a layer of 3C-SiC, a cubic polytype of silicon carbide, between GaN and diamond. This technique significantly reduces the thermal resistance of the interface and improves heat dissipation.
Synthetic
The new technology has the potential to significantly reduce CO2 emissions and might change the development of power and radio frequency electronics with improved thermal management capabilities, according to Professor Liang.
For a better understanding
What is gallium nitride (GaN)?
GaN is a semiconductor used in high power and high frequency devices.
Why is diamond used as a substrate?
Diamond has the highest thermal conductivity of all natural materials, making it ideal for thermal management.
What is 3C-SiC layer?
The 3C-SiC layer is a cubic polytype of silicon carbide, used to reduce the thermal resistance of the interface between GaN and diamond.
What are the advantages of this new technology?
It has more than double the heat dissipation performance of transistors of the same shape made on a silicon carbide (SiC) substrate.
What is the potential impact of this technology?
It has the potential to significantly reduce CO2 emissions and might change the development of power and radio frequency electronics.
References
Main illustration caption: The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, resulting in better performance. Credit: Jianbo Liang, Osaka Metropolitan University
Article : “High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes” – DOI: 10.1002/smll.202305574
[ Rédaction ]
1703284860
#Japanese #researchers #exploit #diamonds #potential #improve #transistors
